Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Y. Furukawa*, H. Takao, J. Yamamoto, S. Furukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

Original languageEnglish
Pages (from-to)341-342
Number of pages2
JournalSynthetic Metals
Publication statusPublished - 2003 Apr 4


  • Infrared and Raman spectroscopy
  • Metal-insulator-semiconductor diodes
  • Polythiophene and derivatives

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s'. Together they form a unique fingerprint.

Cite this