Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Y. Furukawa; H. Takao; J. Yamamoto; S. Furukawa

doi:10.1016/S0379-6779(02)00624-0

Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Y. Furukawa^*, H. Takao, J. Yamamoto, S. Furukawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

Original language	English
Pages (from-to)	341-342
Number of pages	2
Journal	Synthetic Metals
Volume	135-136
DOIs	https://doi.org/10.1016/S0379-6779(02)00624-0
Publication status	Published - 2003 Apr 4

Keywords

Infrared and Raman spectroscopy
Metal-insulator-semiconductor diodes
Polythiophene and derivatives

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/S0379-6779(02)00624-0

Cite this

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title = "Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s",

abstract = "Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.",

keywords = "Infrared and Raman spectroscopy, Metal-insulator-semiconductor diodes, Polythiophene and derivatives",

author = "Y. Furukawa and H. Takao and J. Yamamoto and S. Furukawa",

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T1 - Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

AU - Furukawa, Y.

AU - Takao, H.

AU - Yamamoto, J.

AU - Furukawa, S.

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

AB - Field-induced infrared absorption spectra from the metal-insulator- semiconductor diodes fabricated with regioregular poly(3-hexylthiophene) or poly(3-octylthiophene) have been obtained by using a combination of infrared reflection-absorption spectroscopy and the FT-IR difference-spectrum method. The obtained spectra have been attributed to positive polarons generated at the interface with the insulator (aluminum oxide) layer in the range of minus gate voltage.

KW - Infrared and Raman spectroscopy

KW - Metal-insulator-semiconductor diodes

KW - Polythiophene and derivatives

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VL - 135-136

SP - 341

EP - 342

JO - Synthetic Metals

JF - Synthetic Metals

ER -

Infrared absorption induced by field-effect doping from poly(3-alkylthiophene)s

Abstract

Keywords

ASJC Scopus subject areas

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