Infrared and Raman spectroscopy of organic thin films used for electronic devices

Y. Furukawa; K. Seto; K. Nakajima; Y. Itoh; J. Eguchi; T. Sugiyama; H. Fujimura

doi:10.1016/j.vibspec.2011.10.012

Infrared and Raman spectroscopy of organic thin films used for electronic devices

Y. Furukawa^*, K. Seto, K. Nakajima, Y. Itoh, J. Eguchi, T. Sugiyama, H. Fujimura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We present Raman imaging and photoexcitation infrared studies of organic semiconductor films, which are used in organic light-emitting diodes, thin-film transistors, and photovoltaic solar cells. Raman images of the ratio (R) of intensity of the 1596-cm ^-1 band (b _3g) to that of the 1533-cm ^-1 band (a _g) were used for characterizing the 1.55-nm and the 1.44-nm phases in pentacene thin films. The Raman spectrum of N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD) film formed on a MoO ₃-deposited indium-tin-oxide (ITO)/glass substrate indicated that the cation of NPD is formed upon oxidation by MoO ₃. The Raman image of the sample showed the heterogeneous distribution of the cation of NPD. Photoinduced infrared absorption from a film of regioregular poly(3-octylthiophene) (P3OT) and [6,6]-phenyl-C ₆₁-butyric acid methyl ether (PCBM) blend was measured by difference infrared spectroscopy. The temperature dependence of photoinduced infrared absorption due to positive polarons showed the existence of two kinds of carrier traps.

Original language	English
Pages (from-to)	5-9
Number of pages	5
Journal	Vibrational Spectroscopy
Volume	60
DOIs	https://doi.org/10.1016/j.vibspec.2011.10.012
Publication status	Published - 2012 May

Keywords

IR
Imaging
Molybdenum oxide
NPD
Pentacene
Photoexcitation
Polarons
Raman

ASJC Scopus subject areas

Spectroscopy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.vibspec.2011.10.012

Cite this

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title = "Infrared and Raman spectroscopy of organic thin films used for electronic devices",

abstract = "We present Raman imaging and photoexcitation infrared studies of organic semiconductor films, which are used in organic light-emitting diodes, thin-film transistors, and photovoltaic solar cells. Raman images of the ratio (R) of intensity of the 1596-cm -1 band (b 3g) to that of the 1533-cm -1 band (a g) were used for characterizing the 1.55-nm and the 1.44-nm phases in pentacene thin films. The Raman spectrum of N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD) film formed on a MoO 3-deposited indium-tin-oxide (ITO)/glass substrate indicated that the cation of NPD is formed upon oxidation by MoO 3. The Raman image of the sample showed the heterogeneous distribution of the cation of NPD. Photoinduced infrared absorption from a film of regioregular poly(3-octylthiophene) (P3OT) and [6,6]-phenyl-C 61-butyric acid methyl ether (PCBM) blend was measured by difference infrared spectroscopy. The temperature dependence of photoinduced infrared absorption due to positive polarons showed the existence of two kinds of carrier traps.",

keywords = "IR, Imaging, Molybdenum oxide, NPD, Pentacene, Photoexcitation, Polarons, Raman",

author = "Y. Furukawa and K. Seto and K. Nakajima and Y. Itoh and J. Eguchi and T. Sugiyama and H. Fujimura",

note = "Funding Information: This work is financially supported in part by the Global COE program {\textquoteleft}Center for Practical Chemical Wisdom{\textquoteright} by MEXT.",

year = "2012",

month = may,

doi = "10.1016/j.vibspec.2011.10.012",

language = "English",

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T1 - Infrared and Raman spectroscopy of organic thin films used for electronic devices

AU - Furukawa, Y.

AU - Seto, K.

AU - Nakajima, K.

AU - Itoh, Y.

AU - Eguchi, J.

AU - Sugiyama, T.

AU - Fujimura, H.

N1 - Funding Information: This work is financially supported in part by the Global COE program ‘Center for Practical Chemical Wisdom’ by MEXT.

PY - 2012/5

Y1 - 2012/5

N2 - We present Raman imaging and photoexcitation infrared studies of organic semiconductor films, which are used in organic light-emitting diodes, thin-film transistors, and photovoltaic solar cells. Raman images of the ratio (R) of intensity of the 1596-cm -1 band (b 3g) to that of the 1533-cm -1 band (a g) were used for characterizing the 1.55-nm and the 1.44-nm phases in pentacene thin films. The Raman spectrum of N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD) film formed on a MoO 3-deposited indium-tin-oxide (ITO)/glass substrate indicated that the cation of NPD is formed upon oxidation by MoO 3. The Raman image of the sample showed the heterogeneous distribution of the cation of NPD. Photoinduced infrared absorption from a film of regioregular poly(3-octylthiophene) (P3OT) and [6,6]-phenyl-C 61-butyric acid methyl ether (PCBM) blend was measured by difference infrared spectroscopy. The temperature dependence of photoinduced infrared absorption due to positive polarons showed the existence of two kinds of carrier traps.

AB - We present Raman imaging and photoexcitation infrared studies of organic semiconductor films, which are used in organic light-emitting diodes, thin-film transistors, and photovoltaic solar cells. Raman images of the ratio (R) of intensity of the 1596-cm -1 band (b 3g) to that of the 1533-cm -1 band (a g) were used for characterizing the 1.55-nm and the 1.44-nm phases in pentacene thin films. The Raman spectrum of N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD) film formed on a MoO 3-deposited indium-tin-oxide (ITO)/glass substrate indicated that the cation of NPD is formed upon oxidation by MoO 3. The Raman image of the sample showed the heterogeneous distribution of the cation of NPD. Photoinduced infrared absorption from a film of regioregular poly(3-octylthiophene) (P3OT) and [6,6]-phenyl-C 61-butyric acid methyl ether (PCBM) blend was measured by difference infrared spectroscopy. The temperature dependence of photoinduced infrared absorption due to positive polarons showed the existence of two kinds of carrier traps.

KW - IR

KW - Imaging

KW - Molybdenum oxide

KW - NPD

KW - Pentacene

KW - Photoexcitation

KW - Polarons

KW - Raman

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ER -

Infrared and Raman spectroscopy of organic thin films used for electronic devices

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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