(In,Ga)As gated-vertical quantum dot with an Al2O3 insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The authors fabricated a gated-vertical (In,Ga)As quantum dot with an Al2 O3 gate insulator deposited using atomic layer deposition and investigated its electrical transport properties at low temperatures. The gate voltage dependence of the dIdV-V characteristics shows clear Coulomb diamonds at 1.1 K. The metal-insulator gate structure allowed the authors to control the number of electrons in the quantum dot from 0 to a large number estimated to be about 130.

Original languageEnglish
Article number062102
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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