InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii; Tomonari Sato; Koji Takeda; Koichi Hasebe; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ICIPRM.2014.6880515

InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer

Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO₂/Si substrate before fabricating the BH. An O₂ plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

Original language	English
Title of host publication	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479957293
DOIs	https://doi.org/10.1109/ICIPRM.2014.6880515
Publication status	Published - 2014
Externally published	Yes
Event	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 - Montpellier, France Duration: 2014 May 11 → 2014 May 15

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	26th International Conference on Indium Phosphide and Related Materials, IPRM 2014
Country/Territory	France
City	Montpellier
Period	14/5/11 → 14/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ICIPRM.2014.6880515

Cite this

Fujii, T., Sato, T., Takeda, K., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2014). InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014 Article 6880515 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2014.6880515

InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer. / Fujii, Takuro; Sato, Tomonari; Takeda, Koji et al.
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6880515 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujii, T, Sato, T, Takeda, K, Hasebe, K, Kakitsuka, T & Matsuo, S 2014, InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer. in 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014., 6880515, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Institute of Electrical and Electronics Engineers Inc., 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Montpellier, France, 14/5/11. https://doi.org/10.1109/ICIPRM.2014.6880515

Fujii T, Sato T, Takeda K, Hasebe K, Kakitsuka T, Matsuo S. InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer. In 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6880515. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2014.6880515

Fujii, Takuro ; Sato, Tomonari ; Takeda, Koji et al. / InGaAsP/InP buried heterostruture on SiO₂/Si substrate using epitaxial growth after direct bonding of thin active layer. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

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title = "InGaAsP/InP buried heterostruture on SiO2/Si substrate using epitaxial growth after direct bonding of thin active layer",

abstract = "We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.",

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AU - Fujii, Takuro

AU - Sato, Tomonari

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AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

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AB - We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active layer. We confirm that the crystal quality is not significantly degraded compared with that on InP substrate. These results indicate that the proposed fabrication method is suitable for integrating III-V materials on Si substrate.

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