Initial atomic structure of CaF2/Si(111) interface formation

K. Miura; R. Souda; T. Aizawa; C. Oshima; Y. Ishizawa

doi:10.1016/0038-1098(89)91042-9

Initial atomic structure of CaF₂/Si(111) interface formation

K. Miura^*, R. Souda, T. Aizawa, C. Oshima, Y. Ishizawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF₂ deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF₂(111) surface and shows no change by an irradiation of a low energy electron beam.

Original language	English
Pages (from-to)	605-608
Number of pages	4
Journal	Solid State Communications
Volume	72
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(89)91042-9
Publication status	Published - 1989

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/0038-1098(89)91042-9

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title = "Initial atomic structure of CaF2/Si(111) interface formation",

abstract = "Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.",

author = "K. Miura and R. Souda and T. Aizawa and C. Oshima and Y. Ishizawa",

year = "1989",

doi = "10.1016/0038-1098(89)91042-9",

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journal = "Solid State Communications",

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T1 - Initial atomic structure of CaF2/Si(111) interface formation

AU - Miura, K.

AU - Souda, R.

AU - Aizawa, T.

AU - Oshima, C.

AU - Ishizawa, Y.

PY - 1989

Y1 - 1989

N2 - Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.

AB - Ion scattering spectroscopy (ISS) and electron energy loss spectroscopy (EELS) have revealed that the initial stage of an interface formation is an adsorption state. The adsorption state shows a gradual transition to the interface state as a film form with increasing CaF2 deposition. The EELS spectrum of the adsorption state is quite different from that of a CaF2(111) surface and shows no change by an irradiation of a low energy electron beam.

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U2 - 10.1016/0038-1098(89)91042-9

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JF - Solid State Communications

IS - 6

ER -

Initial atomic structure of CaF₂/Si(111) interface formation

Abstract

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