Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

Yuki Nobusa; Yohei Yomogida; Satoki Matsuzaki; Kazuhiro Yanagi; Hiromichi Kataura; Taishi Takenobu

doi:10.1063/1.3657502

Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

Yuki Nobusa^*, Yohei Yomogida, Satoki Matsuzaki, Kazuhiro Yanagi, Hiromichi Kataura, Taishi Takenobu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics.

Original language	English
Article number	183106
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3657502
Publication status	Published - 2011 Oct 31

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{bdd744fff9d548f2a18fd0b683a1a093,

title = "Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification",

abstract = "In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics.",

author = "Yuki Nobusa and Yohei Yomogida and Satoki Matsuzaki and Kazuhiro Yanagi and Hiromichi Kataura and Taishi Takenobu",

year = "2011",

month = oct,

day = "31",

doi = "10.1063/1.3657502",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

AU - Nobusa, Yuki

AU - Yomogida, Yohei

AU - Matsuzaki, Satoki

AU - Yanagi, Kazuhiro

AU - Kataura, Hiromichi

AU - Takenobu, Taishi

PY - 2011/10/31

Y1 - 2011/10/31

N2 - In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics.

AB - In this paper, we report a method for the inkjet printing of single-walled carbon nanotube thin-film transistors (SWCNT TFTs). Although inkjet technology is a powerful tool for the fabrication of SWCNT TFTs, the diameter of the ink droplets (100 m) strictly limits the device size. Here, we surmount this limitation by combining inkjet technology and site-selective deposition based on the patterning of self-assembled monolayers. We have synthesized patterned SWCNT films with feature widths less than 100 m using this site-selective surface modification method, thus improving the performance limit of SWCNT printed electronics.

UR - http://www.scopus.com/inward/record.url?scp=80855124757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80855124757&partnerID=8YFLogxK

U2 - 10.1063/1.3657502

DO - 10.1063/1.3657502

M3 - Article

AN - SCOPUS:80855124757

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183106

ER -

Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification

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