InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

Toshiki Makimoto; Kenji Kurishima; Takashi Kobayashi; Tadao Ishibashi

doi:10.1109/55.103610

InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

Toshiki Makimoto, Kenji Kurishima, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

Original language	English
Pages (from-to)	369-371
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1109/55.103610
Publication status	Published - 1991 Jul
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.103610

Cite this

@article{c5f92f0ff24e4d25b844b1d9b6643f33,

title = "InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition",

abstract = "We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT{\textquoteright}s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.",

author = "Toshiki Makimoto and Kenji Kurishima and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

month = jul,

doi = "10.1109/55.103610",

language = "English",

volume = "12",

pages = "369--371",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

AU - Makimoto, Toshiki

AU - Kurishima, Kenji

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991/7

Y1 - 1991/7

N2 - We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

AB - We report, for the first time, the successful fabrication of InP/InGaAs double-heterojunction bipolar transistors (DHBT’s), grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates. The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates. The dislocations are found to increase the recombination current very little in the neutral base region, but increase the generation-recombination current at the emitter-base interface.

UR - http://www.scopus.com/inward/record.url?scp=0026189859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026189859&partnerID=8YFLogxK

U2 - 10.1109/55.103610

DO - 10.1109/55.103610

M3 - Article

AN - SCOPUS:0026189859

SN - 0741-3106

VL - 12

SP - 369

EP - 371

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

InP/InGaAs Double-Heterojunction Bipolar Transistors Grown on (100) Si by Metalorganic Chemical Vapor Deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this