The first InP/InGaAs double heterojunction bipolar transistors on Si substrates were grown by metalorganic chemical vapor deposition. The transistor with an InP buffer layer thickness of 4 gm exhibited high current gains of more than 250 and an ideality factor of 1.3. (The base doping concentration and its thickness were 1.5 x 1019 cm-3 and 700 A, respectively.) The characteristics of the DHBT on Si with the 4-/un buffer layer are comparable to those of transistors on InP substrates.
- Current gain
- X-ray FWHM
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy