Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima; Toshiki Makimoto; Takashi Kobayashi; Tadao Ishibashi

doi:10.1143/JJAP.30.L258

Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Kenji Kurishima, Toshiki Makimoto, Takashi Kobayashi, Tadao Ishibashi

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 10¹⁹ cm^-3 show excellent current gain characteristics (current gains h_FE>300, ideality factors n_B< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 10¹⁷ cm^-3.

Original language	English
Pages (from-to)	L258-L261
Journal	Japanese journal of applied physics
Volume	30
Issue number	2B
DOIs	https://doi.org/10.1143/JJAP.30.L258
Publication status	Published - 1991 Feb
Externally published	Yes

Keywords

HBT
InGaAs
InP
MOCVD
Zn diffusion

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.30.L258

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title = "Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition",

abstract = "We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.",

keywords = "HBT, InGaAs, InP, MOCVD, Zn diffusion",

author = "Kenji Kurishima and Toshiki Makimoto and Takashi Kobayashi and Tadao Ishibashi",

year = "1991",

month = feb,

doi = "10.1143/JJAP.30.L258",

language = "English",

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T1 - Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

AU - Kurishima, Kenji

AU - Makimoto, Toshiki

AU - Kobayashi, Takashi

AU - Ishibashi, Tadao

PY - 1991/2

Y1 - 1991/2

N2 - We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

AB - We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 1019 cm-3 show excellent current gain characteristics (current gains hFE>300, ideality factors nB< 1.25) at growth temperatures ranging from 500 to 575°C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 1017 cm-3.

KW - HBT

KW - InGaAs

KW - InP

KW - MOCVD

KW - Zn diffusion

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DO - 10.1143/JJAP.30.L258

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SP - L258-L261

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 2B

ER -

Inp/ingaas heterostructure bipolar transistors grown at low temperature by metalorganic chemical vapor deposition

Abstract

Keywords

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