Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

T. Hiraki; T. Aihara; T. Fujii; K. Takeda; T. Kakitsuka; T. Tsuchizawa; S. Matsuo

doi:10.1109/IEDM19573.2019.8993518

Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

T. Hiraki, T. Aihara, T. Fujii, K. Takeda, T. Kakitsuka, T. Tsuchizawa, S. Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, V_πL of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 V_pp.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993518
Publication status	Published - 2019 Dec
Externally published	Yes
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 2019 Dec 7 → 2019 Dec 11

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	19/12/7 → 19/12/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM19573.2019.8993518

Cite this

Hiraki, T., Aihara, T., Fujii, T., Takeda, K., Kakitsuka, T., Tsuchizawa, T., & Matsuo, S. (2019). Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993518 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993518

Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform. / Hiraki, T.; Aihara, T.; Fujii, T. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993518 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiraki, T, Aihara, T, Fujii, T, Takeda, K, Kakitsuka, T, Tsuchizawa, T & Matsuo, S 2019, Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993518, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 19/12/7. https://doi.org/10.1109/IEDM19573.2019.8993518

Hiraki T, Aihara T, Fujii T, Takeda K, Kakitsuka T, Tsuchizawa T et al. Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993518. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993518

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title = "Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform",

abstract = "We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, VπL of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 Vpp.",

author = "T. Hiraki and T. Aihara and T. Fujii and K. Takeda and T. Kakitsuka and T. Tsuchizawa and S. Matsuo",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

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doi = "10.1109/IEDM19573.2019.8993518",

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AU - Hiraki, T.

AU - Aihara, T.

AU - Fujii, T.

AU - Takeda, K.

AU - Kakitsuka, T.

AU - Tsuchizawa, T.

AU - Matsuo, S.

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N2 - We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, VπL of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 Vpp.

AB - We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, VπL of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 Vpp.

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Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

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