Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

Hidetaka Nishi; Takuro Fuji; Nikolaos Panteleimon Diamantopoulos; Koji Takeda; Erina Kanno; Takaaki Kakitsuka; Tai Tsuchizawa; Hiroshi Fukuda; Shinji Matsuo

doi:10.1109/JLT.2018.2873742

Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

Hidetaka Nishi^*, Takuro Fuji, Nikolaos Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Eight-channel 56-Gbit/s direct four-level pulse-ampli-tude modulation is demonstrated using a 1.3-μm wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eight-channel bit-error rate was 2.7 × 10 ^-3 , which is less than the 7%-overhead hard-decision forward-error-correction limit.

Original language	English
Article number	8533353
Pages (from-to)	266-273
Number of pages	8
Journal	Journal of Lightwave Technology
Volume	37
Issue number	2
DOIs	https://doi.org/10.1109/JLT.2018.2873742
Publication status	Published - 2019 Jan 15
Externally published	Yes

Keywords

Arrayed-waveguide grating multiplexer
SiN waveguide
direct bonding
heterogeneous integration
semiconductor lasers
wavelength division multiplexing

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/JLT.2018.2873742

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title = "Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si",

abstract = " Eight-channel 56-Gbit/s direct four-level pulse-ampli-tude modulation is demonstrated using a 1.3-μm wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eight-channel bit-error rate was 2.7 × 10 -3 , which is less than the 7%-overhead hard-decision forward-error-correction limit.",

keywords = "Arrayed-waveguide grating multiplexer, SiN waveguide, direct bonding, heterogeneous integration, semiconductor lasers, wavelength division multiplexing",

author = "Hidetaka Nishi and Takuro Fuji and Diamantopoulos, {Nikolaos Panteleimon} and Koji Takeda and Erina Kanno and Takaaki Kakitsuka and Tai Tsuchizawa and Hiroshi Fukuda and Shinji Matsuo",

note = "Publisher Copyright: {\textcopyright} 1983-2012 IEEE.",

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doi = "10.1109/JLT.2018.2873742",

language = "English",

volume = "37",

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AU - Nishi, Hidetaka

AU - Fuji, Takuro

AU - Diamantopoulos, Nikolaos Panteleimon

AU - Takeda, Koji

AU - Kanno, Erina

AU - Kakitsuka, Takaaki

AU - Tsuchizawa, Tai

AU - Fukuda, Hiroshi

AU - Matsuo, Shinji

PY - 2019/1/15

Y1 - 2019/1/15

N2 - Eight-channel 56-Gbit/s direct four-level pulse-ampli-tude modulation is demonstrated using a 1.3-μm wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eight-channel bit-error rate was 2.7 × 10 -3 , which is less than the 7%-overhead hard-decision forward-error-correction limit.

AB - Eight-channel 56-Gbit/s direct four-level pulse-ampli-tude modulation is demonstrated using a 1.3-μm wavelength-division-multiplexing (WDM) photonic integrated circuit (PIC) transmitter, consisting of membrane distributed-reflector lasers heterogeneously fabricated on Si and a SiN arrayed-waveguide-grating multiplexer. Direct bonding, epitaxial regrowth, and low-temperature SiN-waveguide fabrication technologies are employed for the integration on Si. Using a nonlinear equalizer, we operated the fabricated WDM PIC transmitter with a low power consumption of 403 fJ/bit for overall 448 Gbit/s signals. The total eight-channel bit-error rate was 2.7 × 10 -3 , which is less than the 7%-overhead hard-decision forward-error-correction limit.

KW - Arrayed-waveguide grating multiplexer

KW - SiN waveguide

KW - direct bonding

KW - heterogeneous integration

KW - semiconductor lasers

KW - wavelength division multiplexing

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Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si

Abstract

Keywords

ASJC Scopus subject areas

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