@inproceedings{4d2bdd9c3cea4d27a48914f32dc109df,
title = "Integration of GaN-SiC and GaN-diamond by surface activated bonding methods",
abstract = "Integration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.",
keywords = "diamond, GaN device, integration, SiC, surface activation bonding",
author = "Fengwen Mu and Tadatomo Suga",
year = "2019",
month = apr,
day = "1",
doi = "10.23919/ICEP.2019.8733419",
language = "English",
series = "2019 International Conference on Electronics Packaging, ICEP 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "198--199",
booktitle = "2019 International Conference on Electronics Packaging, ICEP 2019",
note = "2019 International Conference on Electronics Packaging, ICEP 2019 ; Conference date: 17-04-2019 Through 20-04-2019",
}