@inproceedings{81c9a298a2464be6b84bb8483c7f71af,
title = "Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique",
abstract = "We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.",
keywords = "InAs/InGaAlAs, PL wavelength, intermixing, quantum dots",
author = "A. Matsushita and A. Matsumoto and K. Akahane and Y. Matsushima and K. Utaka",
note = "Copyright: Copyright 2013 Elsevier B.V., All rights reserved.; 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",
year = "2013",
doi = "10.1109/ICIPRM.2013.6562629",
language = "English",
isbn = "9781467361309",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013",
}