Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Kousuke Ohsato; Toshihiko Yoshimasu

doi:10.1109/LMWC.2004.827911

Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Kousuke Ohsato^*, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

Original language	English
Pages (from-to)	204-206
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	14
Issue number	5
DOIs	https://doi.org/10.1109/LMWC.2004.827911
Publication status	Published - 2004 May

Keywords

CMOS
L-band personal communications
MMIC amplifier
SOI

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2004.827911

Cite this

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abstract = "An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.",

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N2 - An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

AB - An internally matched, extremely low operation voltage amplifier monolithic microwave integrated circuit (MMIC) has been implemented in a 0.35-μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology for L-band personal communications. At 1.6 GHz the MMIC amplifier has a gain of 6.4 dB and a noise figure of 4.8 dB at a drain voltage of 0.6 V and a current of 2 mA. The MMIC amplifier exhibits a Gain/Power quotient as high as 5.33 dB/mW, which we believe is the highest recorded for Si CMOS MMIC technology.

KW - CMOS

KW - L-band personal communications

KW - MMIC amplifier

KW - SOI

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Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Abstract

Keywords

ASJC Scopus subject areas

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