International technology roadmap for semiconductors 2005 edition

Takanobu Watanabe*, Kosuke Tatsumura, Iwao Ohdomari

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)


We propose a new oxidation rate equation for silicon supposing only a diffusion of oxidizing species but not including any rate-limiting step by interfacial reaction. It is supposed that diffusivity is suppressed in a strained oxide region near the SiO2 Si interface. The expression of a parabolic constant in the new equation is the same as that of the Deal-Grove model, while a linear constant makes a clear distinction with that of the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layers.

Original languageEnglish
Article number196102
JournalPhysical Review Letters
Issue number19
Publication statusPublished - 2006 May 30

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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