TY - JOUR
T1 - Investigation of a 1.5-μm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector
AU - Umezawa, Toshimasa
AU - Akahane, Kouichi
AU - Kanno, Atsushi
AU - Kawanishi, Tetsuya
PY - 2014/3
Y1 - 2014/3
N2 - We investigated a 1.5-μm-wavelength InAs-based quantum-dot (QD) absorption layer for high-speed and high-sensitivity photodetectors in advanced optical-fiber communications. The photodetector, which contained 20 stacked absorption layers of InAs/InGaAlAs QDs using the straincompensation technique, exhibited a high absorption coefficient, avalanche multiplication effect, and a low dark current. It could operate at a low bias voltage for a p-type-intrinsic-n-type (PIN) diode structure. We expect that the 3-dB bandwidth at a low bias voltage would be approximately 50 GHz, and that the gain and bandwidth product in the avalanche multiplication region would be 150GHz at a high bias voltage.
AB - We investigated a 1.5-μm-wavelength InAs-based quantum-dot (QD) absorption layer for high-speed and high-sensitivity photodetectors in advanced optical-fiber communications. The photodetector, which contained 20 stacked absorption layers of InAs/InGaAlAs QDs using the straincompensation technique, exhibited a high absorption coefficient, avalanche multiplication effect, and a low dark current. It could operate at a low bias voltage for a p-type-intrinsic-n-type (PIN) diode structure. We expect that the 3-dB bandwidth at a low bias voltage would be approximately 50 GHz, and that the gain and bandwidth product in the avalanche multiplication region would be 150GHz at a high bias voltage.
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U2 - 10.7567/APEX.7.032201
DO - 10.7567/APEX.7.032201
M3 - Article
AN - SCOPUS:84904633466
SN - 1882-0778
VL - 7
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
M1 - 032201
ER -