Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

Sathiabama Thiru; Masaki Asakawa; Kazuki Honda; Atsushi Kawaharazuka; Atsushi Tackeuchi; Toshiki Makimoto; Yoshiji Horikoshi

doi:10.1063/1.4908229

Investigation of CuGaSe₂/CuInSe₂ double heterojunction interfaces grown by molecular beam epitaxy

Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe₂/CnInSe₂/CuGaSe₂ grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

Original language	English
Article number	027120
Journal	AIP Advances
Volume	5
Issue number	2
DOIs	https://doi.org/10.1063/1.4908229
Publication status	Published - 2015 Feb 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4908229

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title = "Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy",

abstract = "In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.",

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T1 - Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy

AU - Thiru, Sathiabama

AU - Asakawa, Masaki

AU - Honda, Kazuki

AU - Kawaharazuka, Atsushi

AU - Tackeuchi, Atsushi

AU - Makimoto, Toshiki

AU - Horikoshi, Yoshiji

PY - 2015/2/1

Y1 - 2015/2/1

N2 - In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

AB - In-situ reflection high-energy electron diffraction (RHEED) observation and X-ray diffraction measurements were performed on heterojunction interfaces of CuGaSe2/CnInSe2/CuGaSe2 grown on GaAs (001) using migration-enhanced epitaxy. The streaky RHEED pattern and persistent RHEED intensity oscillations caused by the alternate deposition of migration-enhanced epitaxy sequence are observed and the growths of smooth surfaces are confirmed. RHEED observation results also confirmed constituent material interdiffusion at the heterointerface. Cross-sectional transmission electron microscopy showed a flat and abrupt heterointerface when the substrate temperature is as low as 400 °C. These have been confirmed even by X-ray diffraction and photoluminescence measurements.

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Investigation of CuGaSe₂/CuInSe₂ double heterojunction interfaces grown by molecular beam epitaxy

Abstract

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