The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.
|Number of pages||2|
|Publication status||Published - 1994 May 12|
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering