Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

T. Tsuchiya; M. Komori; K. Uomi; A. Oka; T. Kawano; A. Oishi

doi:10.1049/el:19940560

Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

T. Tsuchiya, M. Komori, K. Uomi, A. Oka, T. Kawano, A. Oishi

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm²) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.

Original language	English
Pages (from-to)	788-789
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	10
DOIs	https://doi.org/10.1049/el:19940560
Publication status	Published - 1994 May 12
Externally published	Yes

Keywords

Photoluminescence
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19940560

Cite this

@article{bb09f7712ad54874963bbdbbd576b893,

title = "Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers",

abstract = "The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.",

keywords = "Photoluminescence, Semiconductor lasers",

author = "T. Tsuchiya and M. Komori and K. Uomi and A. Oka and T. Kawano and A. Oishi",

year = "1994",

month = may,

day = "12",

doi = "10.1049/el:19940560",

language = "English",

volume = "30",

pages = "788--789",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "10",

}

TY - JOUR

T1 - Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

AU - Tsuchiya, T.

AU - Komori, M.

AU - Uomi, K.

AU - Oka, A.

AU - Kawano, T.

AU - Oishi, A.

PY - 1994/5/12

Y1 - 1994/5/12

N2 - The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.

AB - The authors have investigated the effect of strain on 1.3μm InGaAsP lasers under the same well thickness (6nm) and same lasing wavelength (1.34μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23meV), and minimum threshold current density (450A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3mA) was also achieved in a 90-70% coated 200μm-long device.

KW - Photoluminescence

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0028427792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028427792&partnerID=8YFLogxK

U2 - 10.1049/el:19940560

DO - 10.1049/el:19940560

M3 - Article

AN - SCOPUS:0028427792

SN - 0013-5194

VL - 30

SP - 788

EP - 789

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Investigation of effect of strain on low-threshold 1.3μm InGaAsP strained-layer quantum well lasers

Abstract

Keywords

ASJC Scopus subject areas

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