TY - GEN
T1 - Ion beam induced a-axis in-plane oriented c-axis oriented AlN thin film growth for high-Q BAW resonator application
AU - Masamune, Chiaki
AU - Yanagitani, Takahiko
N1 - Funding Information:
This work was supported by the Japan Science and Technology Agency, PRESTO (JST PRESTO, No. JPMJPR16R8) and KAKENHI (Grant–in–Aid for Scientific Research (B), No. 16H04356).
Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - The frequency bands are becoming heavily used because the wireless standard is increased. Therefore, the demands for high Q filters are increasing. In previous study, it was found that the direction of crystal growth of ZnO can be controlled by ion beam irradiation during deposition [1], [2]. We aimed to improve the mechanical Qm factor by aligning the direction of crystal growth of AlN for in-plane direction [3].
AB - The frequency bands are becoming heavily used because the wireless standard is increased. Therefore, the demands for high Q filters are increasing. In previous study, it was found that the direction of crystal growth of ZnO can be controlled by ion beam irradiation during deposition [1], [2]. We aimed to improve the mechanical Qm factor by aligning the direction of crystal growth of AlN for in-plane direction [3].
KW - AlN
KW - ScAlN
KW - ion beam
KW - ion beam irradiation
KW - piezoelectric film
UR - http://www.scopus.com/inward/record.url?scp=85077632169&partnerID=8YFLogxK
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U2 - 10.1109/ULTSYM.2019.8926047
DO - 10.1109/ULTSYM.2019.8926047
M3 - Conference contribution
AN - SCOPUS:85077632169
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 1127
EP - 1128
BT - 2019 IEEE International Ultrasonics Symposium, IUS 2019
PB - IEEE Computer Society
T2 - 2019 IEEE International Ultrasonics Symposium, IUS 2019
Y2 - 6 October 2019 through 9 October 2019
ER -