TY - JOUR
T1 - Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation
AU - Kobayashi, Naoto
AU - Hasegawa, Masataka
AU - Hayashi, Nobuyuki
AU - Tanoue, Hisao
AU - Shibata, Hajime
AU - Makita, Yunosuke
PY - 1995/12/2
Y1 - 1995/12/2
N2 - Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy Si than in Si1-xGex Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy Si layers crystallised by SPEG have both compressive and tensile strains.
AB - Formation of metastable Si1-x-yGexCy layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si1-x-yGexCy layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in Si1-x-yGexCy Si than in Si1-xGex Si with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of Si1-x-yGexCy Si by IBIEC, whereas it has been suggested that Si1-x-yGexCy Si layers crystallised by SPEG have both compressive and tensile strains.
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U2 - 10.1016/0168-583X(95)00720-2
DO - 10.1016/0168-583X(95)00720-2
M3 - Article
AN - SCOPUS:4243358609
SN - 0168-583X
VL - 106
SP - 289
EP - 293
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-4
ER -