TY - JOUR
T1 - Ion-beam-induced epitaxial crystallization of amorphous GaAs on GaAs(100)
AU - Kobayashi, Naoto
AU - Masataka, Hasegawa
AU - Hisao, Kobayashi
AU - Nobuyuki, Hayashi
AU - Makoto, Shinohara
AU - Fumihiko, Ohtani
AU - Masatoshi, Asari
PY - 1991/7/1
Y1 - 1991/7/1
N2 - Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.
AB - Epitaxial crystallization of deposited amorphous GaAs layers on GaAs(100) up to the surface by bombardments with 400 keV Ar and 400 keV Kr has been successfully performed at a temperature range between 125 and 200°C. Properties of crystal growth were investigated as a function of ion species (Ar and Kr), energy (400 and 800 keV), ion dose, dose rate and substrate temperature by RBS channeling experiments. The growth rate has shown a nearly linear dependence on ion fluence. Ion bombardments below 100°C have induced further amorphization beyond the initial crystal/amorphous interface. On the scale of nuclear energy deposition density, bombardments with higher electronic excitation efficiency give a small increase of the growth rate. Ar bombardments have shown a strong dependence of the growth rate on dose rate, whereas Kr bombardments have revealed a weak dependence. An apparent activation energy of 0.13 ± 0.06 eV for the crystal growth was observed.
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U2 - 10.1016/0168-583X(91)95257-E
DO - 10.1016/0168-583X(91)95257-E
M3 - Article
AN - SCOPUS:44949271165
SN - 0168-583X
VL - 59-60
SP - 449
EP - 453
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - PART 1
ER -