Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Naoto Kobayashi; H. Katsumata; Y. Makita; M. Hasegawa; N. Hayashi; H. Shibata; S. Uekusa; S. Hishita

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

Naoto Kobayashi^*, H. Katsumata, Y. Makita, M. Hasegawa, N. Hayashi, H. Shibata, S. Uekusa, S. Hishita

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Epitaxial layers of Si _1-x-yGe _xC _y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si _1-x-yGe _xC _y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si _1-x-yGe _xC _y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I ₁ peak with/without I ₁ related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	189-194
Number of pages	6
Volume	388
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 1995 Apr 17 → 1995 Apr 21

Other

Other	Proceedings of the 1995 MRS Spring Meeting
City	San Francisco, CA, USA
Period	95/4/17 → 95/4/21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. / Kobayashi, Naoto; Katsumata, H.; Makita, Y. et al.
Materials Research Society Symposium - Proceedings. Vol. 388 Materials Research Society, 1995. p. 189-194.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kobayashi, N, Katsumata, H, Makita, Y, Hasegawa, M, Hayashi, N, Shibata, H, Uekusa, S & Hishita, S 1995, Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties. in Materials Research Society Symposium - Proceedings. vol. 388, Materials Research Society, pp. 189-194, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 95/4/17.

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title = "Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties",

abstract = "Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively. ",

author = "Naoto Kobayashi and H. Katsumata and Y. Makita and M. Hasegawa and N. Hayashi and H. Shibata and S. Uekusa and S. Hishita",

year = "1995",

language = "English",

volume = "388",

pages = "189--194",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

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T1 - Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

AU - Kobayashi, Naoto

AU - Katsumata, H.

AU - Makita, Y.

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Shibata, H.

AU - Uekusa, S.

AU - Hishita, S.

PY - 1995

Y1 - 1995

N2 - Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

AB - Epitaxial layers of Si 1-x-yGe xC y on Si(100) (x=0.13 and y=0.014 at peak concentration) were formed by ion implantation of Ge ions and C ions at room temperature (RT) and by subsequent IBIEC (ion-beam-induced epitaxial crystallization) process with 400 keV Ge and Ar ions at 300-400°C and SPEG (solid phase epitaxial growth) process up to 840°C. Crystallization up to the surface both by IBIEC and SPEG processes has been confirmed with RBS- channeling analysis. X-ray diffraction experiments have demonstrated strain compensation by incorporation of C atoms for IBIEC-grown Si 1-x-yGe xC y/Si samples, whereas strain accommodation due to C precipitation has been observed for SPEG-grown Si 1-x-yGe xC y/Si samples. Photoluminescence (PL) observed at 2K from IBIEC-grown samples has shown intense I 1 peak with/without I 1 related (Ar) peak and that from SPEG-grown samples has shown G line emission. These optical properties could suggest that small vacancy agglomeration is dominant in IBIEC-grown samples and C agglomeration is dominant in SPEG-grown samples, respectively.

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M3 - Conference contribution

AN - SCOPUS:0029483643

VL - 388

SP - 189

EP - 194

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties

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