Abstract
The ion-beam-induced epitaxial crystallization (IBIEC) of B+-implanted Si(100) layers, which are preamorphized by Ge+ ion implantation, has been studied by a 400 keV Ar+-ion irradiation at temperature ranges from 300 to 475°C. A minimum Rutherford backscattering yield of the regrowth layer is improved to 7.8% for an Ar+ ion dose of 1.3×1016/cm2 at a substrate temperature of 400°C. The activation energy for IBIEC is estimated to be 0.22 eV. A peak of the depth B profile evaluated by secondary ion mass spectroscopy is shifted to about 35 nm toward the surface after Ar+ ion irradiation. However, the electrical activation of the implanted B atoms is restricted within about 10%. It is also demonstrated that the lateral crystallinity of the amorphous layer can be recovered selectively by the IBIEC technique.
Original language | English |
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Pages (from-to) | 994-997 |
Number of pages | 4 |
Journal | Nuclear Inst. and Methods in Physics Research, B |
Volume | 80-81 |
Issue number | PART 2 |
DOIs | |
Publication status | Published - 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces