Ion beam sputter-deposited ZnO thin film for broadband shear wave excitation in the GHz range

Takahiko Yanagitani*, Masato Kiuch

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


In-plane and out-of-plane oriented (112̄0) ZnO thin films are attractive for shear wave excitation in the GHz range. It is proposed here that highly oriented and submicron-thick (112̄0) ZnO thin films can be fabricated using ion beam sputter-deposition system with grazing incidence to the substrate surface. This (112̄0) texture formation cannot only be attributed to the well-known ion channeling effect or to the self-shadowing effect since the ion beam incidence direction in the system does not correspond to the ion channeling direction of the ZnO film (the [10̄10] or [112̄0] direction). Full-width-at-half-maximum (FWHM) values of the φ-scan and Ψscan profile curves of the (1122) X-ray diffraction poles were measured to be 5° and 28°, respectively. A shear-wave transducer with a 0.9-μm-thick film exhibited an untuned one-way conversion loss of less than 20 dB at 1 - 2 GHz and a 3dB-fractionaI bandwidth of 100%, without any longitudinal wave excitation.

Original languageEnglish
Title of host publication2007 IEEE Ultrasonics Symposium Proceedings, IUS
Number of pages4
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States
Duration: 2007 Oct 282007 Oct 31

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117


Other2007 IEEE Ultrasonics Symposium, IUS
Country/TerritoryUnited States
CityNew York, NY


  • (112̄0) textured ZnO film
  • In-plane texture formation
  • Ion beam sputter deposition
  • Ion-beam-induced texture evolution
  • Shear wave excitation

ASJC Scopus subject areas

  • Acoustics and Ultrasonics


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