Ion irradiation and annealing studies of NbC thin films

Naoto Kobayashi*, R. Kaufmann, G. Linker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Single-phase NbC thin films, prepared by reactive RF sputtering, have been irradiated with 600 keV Ar ions and 200 keV He ions at room temperature in the fluence range from 0.01 to 100 dpa. With the preservation of the B1 structure, the lattice parameter, a0, increases at the first stage of the irradiation and then decreases down to a saturation value for higher fluences. The superconducting transition temperature, Tc, decreases continuously from 11.2 K to 4 K and saturates in the fluence range of a0 saturation. The effects of both ion species irradiations on the changes of the lattice parameter and Tc depressions are nearly the same at a given dpa. Isochronal annealing processes of the sample that has the maximum lattice parameter have revealed a few recovery stages of the lattice parameter and Tc. The recovery stage at 700°C coincides with the recovery of the displacements of the metal atoms.

Original languageEnglish
Pages (from-to)732-735
Number of pages4
JournalJournal of Nuclear Materials
Issue numberC
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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