The kinetics of the generation of E′ centers induced by a 6.4 eV excimer laser were investigated. Enhanced defect generation was observed in OH-containing oxygen-deficient silicas. The increased E′ centers were found to be correlated with an absorption band at 5.7 eV. The intensity of the 5.7 eV band α, as a function of the laser fluence, F, follows a simple formula of α(F) = αs[1 - exp(- DF)], where the values of αs and the decay coefficient, D, depend on the concentrations of SiH and SiOH bonds.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry