Large area diamond selective nucleation based epitaxy

Jing Sheng Ma*, Hiroyuki Yagyu, Akio Hiraki, Hiroshi Kawarada, Takao Yonehara

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A uniform large area H2 plasma can be generated by a magneto-activated microwave plasma chemical vapour deposition (CVD) system. This plasma has been employed, instead of the previously used argon beam, in the diamond selective nucleation based epitaxy (SENTAXY) technique as the irradiation beam to fabricate a large area SENTAXY diamond array which has high potential to make good use of CVD diamond in semiconducting and optical devices. By using this nucleation control technique, an investigation focusing on CVD diamond nucleation sites has also been carried out via an ultrahigh voltage transmission electron microscope. It has been found that diamond preferentially nucleates on the area of the substrate with a high density of defects.

Original languageEnglish
Pages (from-to)192-197
Number of pages6
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1991 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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