Large-area growth of in-plane oriented (112̄0) ZnO films by linear cathode magnetron sputtering

Takayuki Kawamoto*, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe, Yoshikazu Mori, Sho Sasaki, Masatoshi Oba

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


(112̄0) textured ZnO films are good candidates for shear-mode piezoelectric devices. In the previous deposition techniques of these films, there have been two problems related to their practical application. These problems are as follows: (i) highly oriented films can be obtained only in a small area and (ii) the crystallite c-axis of in the films is radially oriented in the substrate plane. To resolve these problems, the sputtering deposition technique using a linear cathode has been proposed. The in-plane and out-of-plane orientations of the films were quantitatively determined by pole figure analysis. As a result, we have demonstrated the formation of in-plane unidirectionally oriented (112̄0) ZnO films over the entire area of 4-in. silicon wafers.

Original languageEnglish
Article number07HD16
JournalJapanese journal of applied physics
Issue number7 PART 2
Publication statusPublished - 2010 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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