TY - JOUR
T1 - Large-area WSe2 electric double layer transistors on a plastic substrate
AU - Funahashi, Kazuma
AU - Pu, Jiang
AU - Li, Ming Yang
AU - Li, Lain Jong
AU - Iwasa, Yoshihiro
AU - Takenobu, Taishi
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices.
AB - Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices.
UR - http://www.scopus.com/inward/record.url?scp=84930701837&partnerID=8YFLogxK
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U2 - 10.7567/JJAP.54.06FF06
DO - 10.7567/JJAP.54.06FF06
M3 - Article
AN - SCOPUS:84930701837
SN - 0021-4922
VL - 54
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 06FF06
ER -