Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate

Kazuma Funahashi, Jiang Pu, Ming Yang Li, Lain Jong Li, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)


    Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe<inf>2</inf> monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe<inf>2</inf> films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10<sup>4</sup>, demonstrating chemically grown WSe<inf>2</inf> transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices.

    Original languageEnglish
    Article number06FF06
    JournalJapanese Journal of Applied Physics
    Issue number6
    Publication statusPublished - 2015 Jun 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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