Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

Yuji Nishikawa; Yoshiaki Nakata; Atsushi Tackeuchi; Shunichi Muto; Osamu Wada

doi:10.1143/JJAP.34.L915

Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

Yuji Nishikawa, Yoshiaki Nakata, Atsushi Tackeuchi, Shunichi Muto^*, Osamu Wada

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp³s* tight-binding energy band calculation for the IPSSL, we deduced that an In_0.74Ga_0.74As/ In_0.26Ga_0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.

Original language	English
Pages (from-to)	L915-L917
Journal	Japanese journal of applied physics
Volume	34
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.34.L915
Publication status	Published - 1995 Jul
Externally published	Yes

Keywords

(110) InP substrate
In-plane superlattice
Laterally modulated structure
Strained superlattice
Tight-binding approximation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.34.L915

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title = "Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate",

abstract = "An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.74As/ In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.",

keywords = "(110) InP substrate, In-plane superlattice, Laterally modulated structure, Strained superlattice, Tight-binding approximation",

author = "Yuji Nishikawa and Yoshiaki Nakata and Atsushi Tackeuchi and Shunichi Muto and Osamu Wada",

year = "1995",

month = jul,

doi = "10.1143/JJAP.34.L915",

language = "English",

volume = "34",

pages = "L915--L917",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7",

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TY - JOUR

T1 - Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

AU - Nishikawa, Yuji

AU - Nakata, Yoshiaki

AU - Tackeuchi, Atsushi

AU - Muto, Shunichi

AU - Wada, Osamu

PY - 1995/7

Y1 - 1995/7

N2 - An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.74As/ In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.

AB - An InAs/GaAs in-plane strained superlattice (IPSSL) grown by molecular beam epitaxy (MBE) is investigated using photoluminescence (PL) measurements. The polarization-dependent PL at 0.77 eV (77 K) with a full width at half maximum of 25 meV indicates that a laterally modulated structure is grown. With the use of the empirical nearest-neighbor sp3s* tight-binding energy band calculation for the IPSSL, we deduced that an In0.74Ga0.74As/ In0.26Ga0.74As IPSSL was actually grown. This reveals that an indium composition modulation ∆x of about 0.48 was achieved, which is more than twice as large as that in in-plane superlattices using other material systems.

KW - (110) InP substrate

KW - In-plane superlattice

KW - Laterally modulated structure

KW - Strained superlattice

KW - Tight-binding approximation

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U2 - 10.1143/JJAP.34.L915

DO - 10.1143/JJAP.34.L915

M3 - Article

AN - SCOPUS:0029342838

SN - 0021-4922

VL - 34

SP - L915-L917

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 7

ER -

Large lateral modulation in InAs/GaAs in-plane strained superlattice on slightly misoriented (110) InP substrate

Abstract

Keywords

ASJC Scopus subject areas

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