Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi; Kazuhide Kumakura; Tetsuya Akasaka; Hideki Yamamoto; Toshiki Makimoto

doi:10.1109/SNW.2014.7348536

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348536
Publication status	Published - 2015 Dec 4
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 2014 Jun 8 → 2014 Jun 9

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Other

Other	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	14/6/8 → 14/6/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/SNW.2014.7348536

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Kobayashi, Y., Kumakura, K., Akasaka, T., Yamamoto, H., & Makimoto, T. (2015). Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 Article 7348536 (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348536

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. / Kobayashi, Yasuyuki; Kumakura, Kazuhide; Akasaka, Tetsuya et al.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348536 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kobayashi, Y, Kumakura, K, Akasaka, T, Yamamoto, H & Makimoto, T 2015, Layered boron nitride as a release layer for mechanical transfer of GaN-based devices. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348536, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14/6/8. https://doi.org/10.1109/SNW.2014.7348536

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abstract = "We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.",

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N2 - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

AB - We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Abstract

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