Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of this approach by growing an AlGaN/GaN heterostructure, an InGaN/GaN multiple-quantum-well (MQW) structure, and a multiple-quantum-well light-emitting diode on h-BN-buffered sapphire substrates. These device structures, ranging in area from five millimeters square to two centimeters square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
Publication statusPublished - 2015 Dec 4
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 2014 Jun 82014 Jun 9

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014


OtherSilicon Nanoelectronics Workshop, SNW 2014
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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