Abstract
Relationship between oxide precipitates, which are one of the important microdefects in typical CZ Si wafers, and a minority carrier recombination lifetime was studied in detail. It was found that the critical size of the oxide precipitates, which act as lifetime killers, is approximately 200-300 A in diameter, and that the lifetime is a strong function of the density of precipitates. If the size is smaller than the critical size, precipitates will not work as lifetime killers, no matter how high their density is. Furthermore, it was found that the annealing at 450 degree C for 64 hours produces a new deep level, which makes the lifetime remarkably small.
| Original language | English |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Metallurgical Soc of AIME |
| Pages | 571-577 |
| Number of pages | 7 |
| ISBN (Print) | 0895204851 |
| Publication status | Published - 1985 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)