Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

Masamichi Okamura; Kazuo Kimura; Seiiti Shirai; Noriyoshi Yamauchi

doi:10.1109/16.277382

Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

Masamichi Okamura^*, Kazuo Kimura, Seiiti Shirai, Noriyoshi Yamauchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.

Original language	English
Pages (from-to)	180-185
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	2
DOIs	https://doi.org/10.1109/16.277382
Publication status	Published - 1994 Feb 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{0fd8132150e545348e41a5c734b2ca1d,

title = "Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate",

abstract = "A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.",

author = "Masamichi Okamura and Kazuo Kimura and Seiiti Shirai and Noriyoshi Yamauchi",

year = "1994",

month = feb,

day = "1",

doi = "10.1109/16.277382",

language = "English",

volume = "41",

pages = "180--185",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

AU - Okamura, Masamichi

AU - Kimura, Kazuo

AU - Shirai, Seiiti

AU - Yamauchi, Noriyoshi

PY - 1994/2/1

Y1 - 1994/2/1

N2 - A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.

AB - A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator.

UR - http://www.scopus.com/inward/record.url?scp=0028377936&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028377936&partnerID=8YFLogxK

U2 - 10.1109/16.277382

DO - 10.1109/16.277382

M3 - Article

AN - SCOPUS:0028377936

SN - 0018-9383

VL - 41

SP - 180

EP - 185

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

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