Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan*, S. Shitara, N. Tanba, M. Fukumi, T. Yoshimasu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

8 Citations (Scopus)


The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

Original languageEnglish
Number of pages2
Publication statusPublished - 2000 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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