Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan; S. Shitara; N. Tanba; M. Fukumi; T. Yoshimasu

Linearity and low-noise performance of SOI MOSFETs for RF applications

A. O. Adan^*, S. Shitara, N. Tanba, M. Fukumi, T. Yoshimasu

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

Original language	English
Pages	30-31
Number of pages	2
Publication status	Published - 2000 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Linearity and low-noise performance of SOI MOSFETs for RF applications",

abstract = "The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.",

author = "Adan, {A. O.} and S. Shitara and N. Tanba and M. Fukumi and T. Yoshimasu",

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T1 - Linearity and low-noise performance of SOI MOSFETs for RF applications

AU - Adan, A. O.

AU - Shitara, S.

AU - Tanba, N.

AU - Fukumi, M.

AU - Yoshimasu, T.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

AB - The integration and performance of RF transistors and passive components in fully depleted silicon on insulator (FD-SOI) process for wireless applications is described. Simple integration was achieved by using high-resistivity substrates. High resistivity SOI enhance the RF performance of the on-chip inductors The RF noise figure (NF) and linearity were the critical parameters affected by the substrates.

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M3 - Paper

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SP - 30

EP - 31

ER -

Linearity and low-noise performance of SOI MOSFETs for RF applications

Abstract

ASJC Scopus subject areas

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