Linearity and low-noise performance of SOI MOSFETs for RF applications

Alberto O. Adan*, Toshihiko Yoshimasu, Shoichi Shitara, Noriyuki Tanba, Masayuki Fukumi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

82 Citations (Scopus)


The MOSFET parameters important for RF application at GHz frequencies: a) transition frequency, b) noise figure, and c) linearity are analyzed and correlated with substrate type. This work demonstrates that, without process changes, high-resistivity silicon-on-insulator (high-ρ SOI) substrates can successfully enhance the RF performance of on-chip inductors and fully depleted (FD)-SOI devices in terms of reducing substrate losses and parasitics. The linearity limitations of the SOI low-breakdown voltage and "kink" effect are addressed by judicious device and circuit design. Criteria for device optimization are derived. A N F = 1.7 dB at 2.5 GHz for a 0.25 μm FD-SOI low-noise amplifier (LNA) on high-ρ SOI substrate obtained the lowest noise figure for applications in the L and S-bands.

Original languageEnglish
Pages (from-to)881-888
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2002 May
Externally publishedYes


  • CMOS
  • LNA
  • Linearity
  • Noise
  • RF
  • SOI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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