Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

Kazuhiko Kusunoki; Kazuhito Kamei; Nobuyoshi Yashiro; Ryo Hattori

doi:10.4028/www.scientific.net/MSF.615-617.137

Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

Kazuhiko Kusunoki^*, Kazuhito Kamei, Nobuyoshi Yashiro, Ryo Hattori

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N _d-N _a ranging from high 10 ¹⁶ to low 10 ¹⁷cm ^-3 are achievable.

Original language	English
Title of host publication	Materials Science Forum
Pages	137-140
Number of pages	4
Volume	615 617
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.615-617.137
Publication status	Published - 2009
Externally published	Yes
Event	7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain Duration: 2008 Sept 7 → 2008 Sept 11

Publication series

Name	Materials Science Forum
Volume	615 617
ISSN (Print)	02555476

Other

Other	7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
Country/Territory	Spain
City	Barcelona
Period	08/9/7 → 08/9/11

Keywords

4H-SiC
Homoepitaxial growth
Liquid phase epitaxy
On-axis

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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Kusunoki, K, Kamei, K, Yashiro, N & Hattori, R 2009, Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 137-140, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 08/9/7. https://doi.org/10.4028/www.scientific.net/MSF.615-617.137

@inproceedings{0c245ee7a6d247ea8078ba3e14fac345,

title = "Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates",

abstract = "We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N d-N a ranging from high 10 16 to low 10 17cm -3 are achievable.",

keywords = "4H-SiC, Homoepitaxial growth, Liquid phase epitaxy, On-axis",

author = "Kazuhiko Kusunoki and Kazuhito Kamei and Nobuyoshi Yashiro and Ryo Hattori",

year = "2009",

doi = "10.4028/www.scientific.net/MSF.615-617.137",

language = "English",

isbn = "9780878493340",

volume = "615 617",

series = "Materials Science Forum",

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note = "7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 ; Conference date: 07-09-2008 Through 11-09-2008",

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TY - GEN

T1 - Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

AU - Kusunoki, Kazuhiko

AU - Kamei, Kazuhito

AU - Yashiro, Nobuyoshi

AU - Hattori, Ryo

PY - 2009

Y1 - 2009

N2 - We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N d-N a ranging from high 10 16 to low 10 17cm -3 are achievable.

AB - We performed liquid phase epitaxial growth of SiC layers on on-axis 4H-SiC substrates using Si solvent. It was found that the polytype controllability of the epilayer significantly depends on the growth process conditions. By optimizing them, polytype mixing in the epilayers can be completely suppressed. It is shown that the density of basal plane dislocations in the epilayers is much less than in the substrates due to on-axis growth. SIMS analysis showed that the concentrations of trace impurity elements (B,Al,Ti,V,Cr,Fe,Ni,P) in the epilayers are under lower detection limit. The only impurity is nitrogen resulting in an n-type layer. Carrier concentrations N d-N a ranging from high 10 16 to low 10 17cm -3 are achievable.

KW - 4H-SiC

KW - Homoepitaxial growth

KW - Liquid phase epitaxy

KW - On-axis

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M3 - Conference contribution

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SN - 9780878493340

VL - 615 617

T3 - Materials Science Forum

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BT - Materials Science Forum

T2 - 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008

Y2 - 7 September 2008 through 11 September 2008

ER -

Liquid phase epitaxy of 4H-SiC layers on on-axis PVT grown substrates

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Keywords

ASJC Scopus subject areas

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