Local-field-enhancement model of DRAM retention failure

A. Hiraiwa*, M. Ogasawara, N. Natsuaki, Y. Itoh, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

45 Citations (Scopus)


We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9


OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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