Abstract
We have developed the local-field-enhancement model of the tail component of DRAM (dynamic random access memory) retention-time distribution. The model is in excellent agreement with experiments and proposes to control not the number but the energy-level distribution of traps and to reduce the space-charge-region-field variation together with the field itself to increase the retention time.
| Original language | English |
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| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 157-160 |
| Number of pages | 4 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9 |
Other
| Other | Proceedings of the 1998 IEEE International Electron Devices Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 98/12/6 → 98/12/9 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering