Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma; A. Chakraborty; B. A. Haskell; S. Keller; S. P. Denbaars; J. S. Speck; S. Nakamura; U. K. Mishra; T. Sota; S. F. Chichibu

doi:10.1063/1.1900947

Localized exciton dynamics in nonpolar (11 2- 0) In_xGa _1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. Denbaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, S. F. Chichibu^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

Original language	English
Article number	151918
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1900947
Publication status	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1900947

Cite this

Onuma, T., Chakraborty, A., Haskell, B. A., Keller, S., Denbaars, S. P., Speck, J. S., Nakamura, S., Mishra, U. K., Sota, T., & Chichibu, S. F. (2005). Localized exciton dynamics in nonpolar (11 2- 0) In_xGa _1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. Applied Physics Letters, 86(15), 1-3. Article 151918. https://doi.org/10.1063/1.1900947

Onuma, T, Chakraborty, A, Haskell, BA, Keller, S, Denbaars, SP, Speck, JS, Nakamura, S, Mishra, UK, Sota, T & Chichibu, SF 2005, 'Localized exciton dynamics in nonpolar (11 2- 0) In_xGa _1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth', Applied Physics Letters, vol. 86, no. 15, 151918, pp. 1-3. https://doi.org/10.1063/1.1900947

@article{c584723cbabe4504b580b2ce63c8131f,

title = "Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",

abstract = "Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.",

author = "T. Onuma and A. Chakraborty and Haskell, {B. A.} and S. Keller and Denbaars, {S. P.} and Speck, {J. S.} and S. Nakamura and Mishra, {U. K.} and T. Sota and Chichibu, {S. F.}",

year = "2005",

doi = "10.1063/1.1900947",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

AU - Onuma, T.

AU - Chakraborty, A.

AU - Haskell, B. A.

AU - Keller, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

AU - Nakamura, S.

AU - Mishra, U. K.

AU - Sota, T.

AU - Chichibu, S. F.

PY - 2005

Y1 - 2005

N2 - Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

AB - Beneficial effects of the localized excitons were confirmed in nonpolar (11 2- 0) Inx Ga1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.

UR - http://www.scopus.com/inward/record.url?scp=20844446950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844446950&partnerID=8YFLogxK

U2 - 10.1063/1.1900947

DO - 10.1063/1.1900947

M3 - Article

AN - SCOPUS:20844446950

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151918

ER -

Localized exciton dynamics in nonpolar (11 2- 0) In_xGa _1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this