Localized excitons in InGaN

S. Chichibu*, T. Deguchi, T. Sota, K. Wada, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


Emission mechanisms of the device-quality quantum well (QW) structure and bulk three dimensional InGaN materials grown on sapphire substrates without any epitaxial layer overgrown GaN base layers were investigated. The InxGa1-xN layers showed various degree of spatial potential (bandgap) fluctuation produced by some kinetic driving forces initiated by the threading dislocations or growth steps during the growth. The degree of fluctuation changed remarkably around nominal InN molar fraction x = 0.2, which changes to nearly 8-10% for the strained InxGa1-xN. This potential fluctuation induces energy tail states both in QW and three dimensional InGaN.

Original languageEnglish
Pages (from-to)613-624
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: 1997 Dec 11997 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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