Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

Shunichi Muto; Tsuguo Inata; Atsushi Tackeuchi; Yoshihiro Sugiyama; Toshio Fujii

doi:10.1063/1.104881

Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

Shunichi Muto^*, Tsuguo Inata, Atsushi Tackeuchi, Yoshihiro Sugiyama, Toshio Fujii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.

Original language	English
Pages (from-to)	2393-2395
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	21
DOIs	https://doi.org/10.1063/1.104881
Publication status	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures",

abstract = "We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.",

author = "Shunichi Muto and Tsuguo Inata and Atsushi Tackeuchi and Yoshihiro Sugiyama and Toshio Fujii",

year = "1991",

doi = "10.1063/1.104881",

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journal = "Applied Physics Letters",

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T1 - Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

AU - Muto, Shunichi

AU - Inata, Tsuguo

AU - Tackeuchi, Atsushi

AU - Sugiyama, Yoshihiro

AU - Fujii, Toshio

PY - 1991

Y1 - 1991

N2 - We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.

AB - We discuss the electron tunneling time observed in a new AlGaAs/GaAs superlattice structure, the tunneling bi-quantum well (TBQ). To calculate the nonresonant tunneling time, we made experiments on resonant tunneling to confirm that the 60% rule of conduction-band discontinuity accurately evaluates the free tunneling probability of electrons. We found that the observed recovery time agrees quite well with the calculated longitudinal optical phonon emission tunneling time for thin (≤ 10 monolayers) barriers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

Abstract

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