Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

Q. D. Qian*, J. Qiu, M. R. Melloch, J. A. Cooper, L. A. Kolodziejski, M. Kobayashi, R. L. Gunshor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10-8 A cm-2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.

Original languageEnglish
Pages (from-to)1359-1361
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface'. Together they form a unique fingerprint.

Cite this