Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film

Masatoshi Mitsuya; Norimasa Nukaga; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada

doi:10.1063/1.1407858

Low leakage current and good ferroelectric properties of SrBi₂(Ta_0.7Nb_0.3)₂O ₉-Bi₃TiTaO₉ solid solution thin film

Masatoshi Mitsuya^*, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

(1-x)SrBi₂(Ta_0.7Nb_0.3)₂O ₉+xBi₃TiTaO₉ (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO₂/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (P_r) of the directly crystallized SBTN (x=0) was very small. However, the P_r value increased to 7.1 μC/cm² by adding 30% of BTT (x=0.3) and was almost equal to that of Sr_0.8Bi_2.2(Ta_0.7Nb_0.3) ₂0₉(S_0.8B_2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10^-8 A/cm² for fields up to 200 kV/cm due to its low defect contents character, while that of S_0.8B_2.2TN was above 10^-6A/cm² due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

Original language	English
Pages (from-to)	2067-2069
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1407858
Publication status	Published - 2001 Sept 24
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{c51216653df84a888872b9e32b60437e,

title = "Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film",

abstract = "(1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.",

author = "Masatoshi Mitsuya and Norimasa Nukaga and Takayuki Watanabe and Hiroshi Funakubo and Keisuke Saito and Minoru Osada",

year = "2001",

month = sep,

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doi = "10.1063/1.1407858",

language = "English",

volume = "79",

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journal = "Applied Physics Letters",

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T1 - Low leakage current and good ferroelectric properties of SrBi2(Ta0.7Nb0.3)2O 9-Bi3TiTaO9 solid solution thin film

AU - Mitsuya, Masatoshi

AU - Nukaga, Norimasa

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

AU - Saito, Keisuke

AU - Osada, Minoru

PY - 2001/9/24

Y1 - 2001/9/24

N2 - (1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

AB - (1-x)SrBi2(Ta0.7Nb0.3)2O 9+xBi3TiTaO9 (x=0-0.5) solid-solution (SBTN+BTT) films of low defect contents were directly crystallized on (111)Pt/Ti/SiO2/Si substrates at 650°C by metal-organic chemical vapor deposition. The deposited films showed a strong (103) orientation. The remanent polarization (Pr) of the directly crystallized SBTN (x=0) was very small. However, the Pr value increased to 7.1 μC/cm2 by adding 30% of BTT (x=0.3) and was almost equal to that of Sr0.8Bi2.2(Ta0.7Nb0.3) 209(S0.8B2.2TN), which is widely studied for nonvolatile memory applications. The leakage current density of the SBTN+BTT solid solution was on the order of 10-8 A/cm2 for fields up to 200 kV/cm due to its low defect contents character, while that of S0.8B2.2TN was above 10-6A/cm2 due to the existence of defects in the Sr sites. The solid-solution film showed a fatigue-free character.

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Low leakage current and good ferroelectric properties of SrBi₂(Ta_0.7Nb_0.3)₂O ₉-Bi₃TiTaO₉ solid solution thin film

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