Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Tai Tsuchizawa; Toshifumi Watanabe; Koji Yamada; Hiroshi Fukuda; Seiichi Itabashi; Junichi Fujikata; Akiko Gomyo; Jun Ushida; Daisuke Okamoto; Kenichi Nishi; Keishi Ohashi

doi:10.1143/JJAP.47.6739

Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Tai Tsuchizawa^*, Toshifumi Watanabe, Koji Yamada, Hiroshi Fukuda, Seiichi Itabashi, Junichi Fujikata, Akiko Gomyo, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

Original language	English
Pages (from-to)	6739-6743
Number of pages	5
Journal	Japanese journal of applied physics
Volume	47
Issue number	8 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.6739
Publication status	Published - 2008 Aug 22
Externally published	Yes

Keywords

Branch
Multimode interference (MMI)
On-chip optical interconnect
Optical waveguide
Plasma-enhanced CVD
Propagation loss
Si photodiode
Silicon oxynitride (SiON)
Surface plasmon antenna

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region",

abstract = "We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.",

keywords = "Branch, Multimode interference (MMI), On-chip optical interconnect, Optical waveguide, Plasma-enhanced CVD, Propagation loss, Si photodiode, Silicon oxynitride (SiON), Surface plasmon antenna",

author = "Tai Tsuchizawa and Toshifumi Watanabe and Koji Yamada and Hiroshi Fukuda and Seiichi Itabashi and Junichi Fujikata and Akiko Gomyo and Jun Ushida and Daisuke Okamoto and Kenichi Nishi and Keishi Ohashi",

year = "2008",

month = aug,

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doi = "10.1143/JJAP.47.6739",

language = "English",

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T1 - Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

AU - Tsuchizawa, Tai

AU - Watanabe, Toshifumi

AU - Yamada, Koji

AU - Fukuda, Hiroshi

AU - Itabashi, Seiichi

AU - Fujikata, Junichi

AU - Gomyo, Akiko

AU - Ushida, Jun

AU - Okamoto, Daisuke

AU - Nishi, Kenichi

AU - Ohashi, Keishi

PY - 2008/8/22

Y1 - 2008/8/22

N2 - We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

AB - We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10μm and a high-speed response of 17ps were demonstrated for the waveguide-integrated Si nano-PD.

KW - Branch

KW - Multimode interference (MMI)

KW - On-chip optical interconnect

KW - Optical waveguide

KW - Plasma-enhanced CVD

KW - Propagation loss

KW - Si photodiode

KW - Silicon oxynitride (SiON)

KW - Surface plasmon antenna

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 8 PART 2

ER -

Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region

Abstract

Keywords

ASJC Scopus subject areas

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