Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

Hidetaka Nishi; Koji Takeda; Takuro Fujii; Eiichi Kuramochi; Akihiko Shinya; Masaya Notomi; Tai Tsuchizawa; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ISLC.2018.8516174

Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

Hidetaka Nishi, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

An InP-based photonic-crystal laser is integrated with a Si waveguide by using direct bonding and buried regrowth technologies on an SOI substrate. The fabricated device exhibits a threshold current of 24 pA and a 7.3-fJ/bit energy cost in direct modulation of a 10-Gbit/s NRZ signal.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	77-78
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516174
Publication status	Published - 2018 Oct 30
Externally published	Yes
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 2018 Sept 16 → 2018 Sept 19

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	18/9/16 → 18/9/19

Keywords

Direct bonding
Semiconductor laser
Silicon photonics

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516174

Cite this

Nishi, H., Takeda, K., Fujii, T., Kuramochi, E., Shinya, A., Notomi, M., Tsuchizawa, T., Kakitsuka, T., & Matsuo, S. (2018). Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 77-78). [8516174] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516174

Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide. / Nishi, Hidetaka; Takeda, Koji; Fujii, Takuro et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 77-78 8516174 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishi, H, Takeda, K, Fujii, T, Kuramochi, E, Shinya, A, Notomi, M, Tsuchizawa, T, Kakitsuka, T & Matsuo, S 2018, Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516174, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 77-78, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516174

Nishi H, Takeda K, Fujii T, Kuramochi E, Shinya A, Notomi M et al. Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 77-78. 8516174. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516174

@inproceedings{a5f2571e2a4e406d96513b4894ea1831,

title = "Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide",

abstract = "An InP-based photonic-crystal laser is integrated with a Si waveguide by using direct bonding and buried regrowth technologies on an SOI substrate. The fabricated device exhibits a threshold current of 24 pA and a 7.3-fJ/bit energy cost in direct modulation of a 10-Gbit/s NRZ signal.",

keywords = "Direct bonding, Semiconductor laser, Silicon photonics",

author = "Hidetaka Nishi and Koji Takeda and Takuro Fujii and Eiichi Kuramochi and Akihiko Shinya and Masaya Notomi and Tai Tsuchizawa and Takaaki Kakitsuka and Shinji Matsuo",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516174",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "77--78",

booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

note = "26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

}

TY - GEN

T1 - Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

AU - Nishi, Hidetaka

AU - Takeda, Koji

AU - Fujii, Takuro

AU - Kuramochi, Eiichi

AU - Shinya, Akihiko

AU - Notomi, Masaya

AU - Tsuchizawa, Tai

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2018/10/30

Y1 - 2018/10/30

N2 - An InP-based photonic-crystal laser is integrated with a Si waveguide by using direct bonding and buried regrowth technologies on an SOI substrate. The fabricated device exhibits a threshold current of 24 pA and a 7.3-fJ/bit energy cost in direct modulation of a 10-Gbit/s NRZ signal.

AB - An InP-based photonic-crystal laser is integrated with a Si waveguide by using direct bonding and buried regrowth technologies on an SOI substrate. The fabricated device exhibits a threshold current of 24 pA and a 7.3-fJ/bit energy cost in direct modulation of a 10-Gbit/s NRZ signal.

KW - Direct bonding

KW - Semiconductor laser

KW - Silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85057366164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057366164&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516174

DO - 10.1109/ISLC.2018.8516174

M3 - Conference contribution

AN - SCOPUS:85057366164

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 77

EP - 78

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Low-Operating Energy Heterogeneously Integrated Photonic-Crystal Laser on Si Waveguide

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this