Abstract
A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.
Original language | English |
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Pages (from-to) | 678-682 |
Number of pages | 5 |
Journal | IEICE Transactions on Electronics |
Volume | E88-C |
Issue number | 4 |
DOIs | |
Publication status | Published - 2005 Apr |
Keywords
- InGaP/GaAs HBT
- Low phase noise
- Millimeter-wave
- VCO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering