Low phase noise, InGaP/GaAs HBT VCO MMIC for millimeter-wave applications

Satoshi Kurachi*, Toshihiko Yoshimasu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm × 1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of -118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

Original languageEnglish
Pages (from-to)678-682
Number of pages5
JournalIEICE Transactions on Electronics
Issue number4
Publication statusPublished - 2005 Apr


  • InGaP/GaAs HBT
  • Low phase noise
  • Millimeter-wave
  • VCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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