Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Xin Yang; Yorikatsu Uchida; Qing Liu; Toshihiko Yoshimasu

doi:10.1109/IMWS2.2012.6338206

Low-power ultra-wideband power detector IC in 130 nm CMOS technology

Xin Yang^*, Yorikatsu Uchida, Qing Liu, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents a low operation voltage ultrawideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
Pages	52-55
Number of pages	4
DOIs	https://doi.org/10.1109/IMWS2.2012.6338206
Publication status	Published - 2012 Dec 20
Event	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing, China Duration: 2012 Sept 18 → 2012 Sept 20

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

Conference

Conference	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
Country/Territory	China
City	Nanjing
Period	12/9/18 → 12/9/20

ASJC Scopus subject areas

Computer Networks and Communications

Access to Document

10.1109/IMWS2.2012.6338206

Cite this

Yang, X., Uchida, Y., Liu, Q., & Yoshimasu, T. (2012). Low-power ultra-wideband power detector IC in 130 nm CMOS technology. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding (pp. 52-55). [6338206] (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). https://doi.org/10.1109/IMWS2.2012.6338206

Low-power ultra-wideband power detector IC in 130 nm CMOS technology. / Yang, Xin; Uchida, Yorikatsu; Liu, Qing et al.
IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 52-55 6338206 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, X, Uchida, Y, Liu, Q & Yoshimasu, T 2012, Low-power ultra-wideband power detector IC in 130 nm CMOS technology. in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding., 6338206, IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding, pp. 52-55, 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012, Nanjing, China, 12/9/18. https://doi.org/10.1109/IMWS2.2012.6338206

Yang X, Uchida Y, Liu Q, Yoshimasu T. Low-power ultra-wideband power detector IC in 130 nm CMOS technology. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 52-55. 6338206. (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). doi: 10.1109/IMWS2.2012.6338206

Yang, Xin ; Uchida, Yorikatsu ; Liu, Qing et al. / Low-power ultra-wideband power detector IC in 130 nm CMOS technology. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. pp. 52-55 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

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AB - This paper presents a low operation voltage ultrawideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW.

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Low-power ultra-wideband power detector IC in 130 nm CMOS technology

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