Low pressure CVD for wide area diamond film deposition at low temperature

Akio Hiraki*, Hiroshi Kawarada, Jin Wei, Jing Sheng Ma, Jun ichi Suzuki

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We have applied magneto-microwave plasma to be successful, for the first time, in deposition of diamond at far lower pressure than the conventional high pressure plasma CVD. The important point of the low pressure plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2.45 GHz microwave) at the deposition area. The high density plasma (above 1×1011 /cm3) necessary for high quality diamond formation has been obtained by the effective microwave absorption near the magnetic field satisfying the ECR condition. The plasma is quite uniform at the discharge area (160 mm in diameter) and uniform diamond films with high quality have been obtained. From the investigation of diamond formation from 50 Torr to 10-2 Torr in the same deposition system, it is definite that the lower pressure lowers the formation temperature of diamond to 500°C and the effective species for diamond formation are low energy radicals.

Original languageEnglish
Pages (from-to)73-80
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1990
Externally publishedYes
EventDiamond Optics III - San Diego, CA, USA
Duration: 1990 Jul 91990 Jul 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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