TY - JOUR
T1 - Low-pressure diamond nucleation and growth on Cu substrate
AU - Ojika, Shin ichi
AU - Yamashita, Satoshi
AU - Kataoka, Kazuhiro
AU - Ishikura, Takefumi
AU - Yamaguchi, Akira
AU - Kawarada, Hiroshi
PY - 1993
Y1 - 1993
N2 - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
AB - We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH4/H2 plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.
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U2 - 10.1143/JJAP.32.L200
DO - 10.1143/JJAP.32.L200
M3 - Article
AN - SCOPUS:0027540841
SN - 0021-4922
VL - 32
SP - L200-L203
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 2 A
ER -