Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.

Original languageEnglish
Pages (from-to)145-146
Number of pages2
JournalIEICE Transactions on Electronics
Issue number1
Publication statusPublished - 2007 Jan
Externally publishedYes


  • Au-to-Au bonding
  • Hybrid integration
  • Lithium niobate/silicon structure
  • Low-temperature bonding
  • Surface-activated bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air'. Together they form a unique fingerprint.

Cite this