Low-temperature Au-to-Au bonding for LiNbO3/Si structure achieved in ambient air

Ryo Takigawa; Eiji Higurashi; Tadatomo Suga; Satoshi Shinada; Tetsuya Kawanishi

doi:10.1093/ietele/e90-c.1.145

Low-temperature Au-to-Au bonding for LiNbO₃/Si structure achieved in ambient air

Ryo Takigawa^*, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A lithium niobate (LiNbO₃)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO₃ chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.

Original language	English
Pages (from-to)	145-146
Number of pages	2
Journal	IEICE Transactions on Electronics
Volume	E90-C
Issue number	1
DOIs	https://doi.org/10.1093/ietele/e90-c.1.145
Publication status	Published - 2007 Jan
Externally published	Yes

Keywords

Au-to-Au bonding
Hybrid integration
Lithium niobate/silicon structure
Low-temperature bonding
Surface-activated bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1093/ietele/e90-c.1.145

Cite this

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abstract = "A lithium niobate (LiNbO3)/silicon (Si) hybrid structure has been developed by the surface-activated bonding of LiNbO3 chips with gold (Au) thin film to Si substrates with patterned Au film. After organic contaminants on the Au surfaces were removed using argon radio-frequency plasma, Au-to-Au bonding was carried out in ambient air. Strong bonding at significantly low temperatures below 100°C without generating cracks has been demonstrated.",

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AU - Shinada, Satoshi

AU - Kawanishi, Tetsuya

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