Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

Shin Ito; Jun Mizuno; Hiroyuki Ishida; Toshinori Ogashiwa; Yukio Kanehira; Hiroshi Murai; Fumihiro Wakai; Shuichi Shoji

doi:10.1109/ICSJ.2012.6523451

Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

Shin Ito, Jun Mizuno^*, Hiroyuki Ishida, Toshinori Ogashiwa, Yukio Kanehira, Hiroshi Murai, Fumihiro Wakai, Shuichi Shoji

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

Original language	English
Title of host publication	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs	https://doi.org/10.1109/ICSJ.2012.6523451
Publication status	Published - 2012 Dec 1
Event	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan Duration: 2012 Dec 10 → 2012 Dec 12

Publication series

Name	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Conference

Conference	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
Country/Territory	Japan
City	Kyoto
Period	12/12/10 → 12/12/12

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Ito, S, Mizuno, J, Ishida, H, Ogashiwa, T, Kanehira, Y, Murai, H, Wakai, F & Shoji, S 2012, Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging. in 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012., 6523451, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, Kyoto, Japan, 12/12/10. https://doi.org/10.1109/ICSJ.2012.6523451

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title = "Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging",

abstract = "In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.",

author = "Shin Ito and Jun Mizuno and Hiroyuki Ishida and Toshinori Ogashiwa and Yukio Kanehira and Hiroshi Murai and Fumihiro Wakai and Shuichi Shoji",

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doi = "10.1109/ICSJ.2012.6523451",

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T1 - Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

AU - Ito, Shin

AU - Mizuno, Jun

AU - Ishida, Hiroyuki

AU - Ogashiwa, Toshinori

AU - Kanehira, Yukio

AU - Murai, Hiroshi

AU - Wakai, Fumihiro

AU - Shoji, Shuichi

PY - 2012/12/1

Y1 - 2012/12/1

N2 - In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

AB - In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200°C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100°C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

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DO - 10.1109/ICSJ.2012.6523451

M3 - Conference contribution

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SN - 9781467326551

T3 - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

BT - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

T2 - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Y2 - 10 December 2012 through 12 December 2012

ER -

Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

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